Серия биполярных транзисторов LBC847

Общие характеристики

	Раздел	Биполярный транзистор
	Напряжение КЭ максимальное
	Ток коллектора
	Граничная рабочая частота

Документация на серию LBC847

LBC847ALT1G S-LBC847ALT1G General Purpose Transistors NPN Silicon 1. FEATURES ● Moisture Sensitivity Level: 1 ● ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 3 COLLECTOR 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC847ALT1G 1E 3000/Tape&Reel LBC847ALT3G 1E 10000/Tape&Reel 1 BASE Shipping 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 6 V IC 100 mA Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC 556 ºC/W 300 mW 2.4 mW/ºC RΘJA 417 ºC/W TJ,Tstg −55∼+150 ºC Total Device Dissipation, Thermal Resistance, Symbol PD RΘJA Junction–to–Ambient Total Device Dissipation, PD Alumina Substrate (Note 2) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.A Nov. 2017 1/5

Документация на LBC847ALT1G

Дата модификации: 02.01.1970

Размер: 305.7 Кб

5 стр.

найти LBC847.pdf

Товары серии LBC847

Наименование	i	Упаковка	Тип	P_расс	U_КЭ(пад)	h 21
LBC847ALT1G (LRC)
LBC847BDW1T1G SOT363 (LRC)					—
LBC847BLT1G (LRC)		1 шт
LBC847BPDW1T1G SC-88 XPB (LRC)					—
LBC847BTT1G (LRC)		в ленте 1100 шт
LBC847BWT1G (LRC)		в ленте 3000 шт
LBC847CDW1T1G (LRC)			—
LBC847CLT1G SOT23 XPB (LRC)					—
LBC847CWT1G (LRC)