Серия выпрямительных диодов MBR20H200

Taiwan Semiconductor

Общие характеристики

 Раздел Выпрямительные диоды
Корпус TO-220-3
Схема включения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Особенности
Обратный ток диода
Рабочая температура
Монтаж

Документация на серию MBR20H200

MBR20H100CT – MBR20H200CT Taiwan Semiconductor 20A, 100V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 150 A TJ MAX 175 °C APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.80g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM MBR 20H100CT MBR 20H100CT 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage MBR 20H150CT MBR 20H150CT 150 105 MBR UNIT 20H200CT MBR 20H200CT 200 V 140 V IF 20 A IFSM 150 A IRRM 1.0 0.5 A IFRM 20 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: I2104 PDF
Документация на MBR20H100CT 

Дата модификации: 04.05.2021

Размер: 533.5 Кб

6 стр.

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