CS4N60A3R

CR Micro
Silicon N-Channel Power MOSFET R ○ CS4N60 A3R General Description： 600 V ID 4 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.1 Ω CS4N60 A3R, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching ci...
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Технические характеристики

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Корпус TO251
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Silicon N-Channel Power MOSFET R ○ CS4N60 A3R General Description： 600 V ID 4 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.1 Ω CS4N60 A3R, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 600 V 4 A 2.5 A 16 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 250 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 75 W 0.60 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID IDM Continuous Drain Current T C = 100 °C a1 Pulsed Drain Current VGS EAS a2 dv/dt a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 of 1 0 2 0 1 5 V0 1 PDF
Документация на CS4N60A3R 

CS4N60%20A3R[1]

Дата модификации: 22.02.2016

Размер: 220.5 Кб

10 стр.

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