DB107S T/R

DC Components
DB101S DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB107S TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECITFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Surge overload rating - 30 Amperes peak Ideal for printed circuit board Reliable low cost construction Glass passivated junction DB-1S .310(7.9) .290(7.4) MECHANICAL DATA * * * * * *...
развернуть ▼ свернуть ▲
 

Технические характеристики

показать свернуть
Корпус DB1S
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Аналоги 4

показать свернуть
Тип Наименование Корпус Упаковка i Схема Uобр Uпрям Iпрям Примечание T раб Карточка
товара
P+ DB107 (YJ)
 

DB107 (DIODES) 		DIP4 в линейках 50 шт
 
 Bridge Rectifier Diode, 1A, 1000V V(RRM)
P+ DB107S T/R (YJ)
 
DB1S в ленте 1500 шт
 
 Bridge Rectifier Diode, 1A, 1000V V(RRM), Silicon
P+ DB107S (YJ)
 
DB1S в ленте 1500 шт
 
 Bridge Rectifier Diode, 1A, 1000V V(RRM), Silicon
P= DB107S (DC)
 
DB1S в линейках 50 шт
 
 — —

Файлы 1

показать свернуть
DB101S DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB107S TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECITFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Surge overload rating - 30 Amperes peak Ideal for printed circuit board Reliable low cost construction Glass passivated junction DB-1S .310(7.9) .290(7.4) MECHANICAL DATA * * * * * * .267(6.8) .245(6.2) Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-202E, Method 208 guaranteed Polarity: Symbols molded or marked on body Mounting position: Any Weight: 0.38 gram .012(0.3) .008(0.2) .047(1.2) .038(1.0) .410(10.4) .360(9.4) .335(8.5) .315(8.0) .059(1.5) .039(1.0) .102(2.6) .087(2.2) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .205(5.2) .195(5.0) SPACING Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Maximum Average Forward Output Current at T A = 40 oC Volts IO 1.0 Amps I FSM 30 Amps 1.1 Volts Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage Drop per element at 1.0A DC Maximum DC Reverse Current at Rated @T A = 25 oC DC Blocking Voltage per element @T A = 125 o C VF IR 10 I 2t Rating for Fusing (t<8.3ms) I2t 10.4 Typical Junction Capacitance ( Note1) CJ 25 RθJ A 40 T J,TSTG -55 to + 150 Typical Thermal Resistance (Note 2) Operating and Storage Temperature Range uAmps 500 A 2 Sec pF 0 C/W 0 C NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts 2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads. REV-3,MAR,2017 1 www.dccomponents.com PDF
Документация на DB107S 

Дата модификации: 02.01.1970

Размер: 55.9 Кб

3 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.

    DB107 (YJ)