IRLML5103

Hottech
IRLML5103 P-Channel Power MOSFET FEATURES Generation V Technology Ultra Low On-Resistance Low Profile (<1.1mm) Fast Switching MECHANICAL DATA         SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS ...
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Технические характеристики

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Корпус SOT-23-3
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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IRLML5103 P-Channel Power MOSFET FEATURES Generation V Technology Ultra Low On-Resistance Low Profile (<1.1mm) Fast Switching MECHANICAL DATA         SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG RJA Parameter Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. Units -0.76 -0.61 -4.8 540 4.3 ± 20 -5.0 -55 to + 150 A mW mW/˚C V V/ns °C 230 Maximum Junction-to-Ambient „ °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -3 0 ––– ––– ––– -1.0 0.44 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.029 ––– ––– ––– ––– ––– ––– ––– ––– 3.4 0.52 1.1 10 8.2 23 16 75 37 18 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.60 VGS = -10V, ID = -0.60A ƒ  1.0 VGS = -4.5V, ID = -0.30A ƒ ––– V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -0.30A -1.0 VDS = -24V, VGS = 0V µA -25 VDS = -24V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V ID = -0.60A 5.1 0.78 nC VDS = -24V 1.7 VGS = -10V, See Fig. 6 and 9 ƒ ––– VDD = -15V ID = -0.60A ––– ns RG = 6.2 ––– ––– RD = 25 See Fig. 10 ƒ ––– VGS = 0V pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 ––– Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes:  ‚ ƒ „ Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol ––– ––– -0.54 (Body Diode) showing the A integral reverse Pulsed Source Current ––– ––– -4.8 (Body Diode)  p-n junction diode. Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V ƒ 39 ns TJ = 25°C, IF = -0.60A Reverse Recovery Time ––– 26 Reverse Recovery Charge ––– 20 30 nC di/dt = 100A/µs ƒ Repetitive rating ; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD  -0.60A, di/dt  110A/µs, VDD  V(BR)DSS, TJ  150°C Pulse width  300 µs ; duty cycle  2%. Surface mounted on FR-4 board, t  5sec. ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com D G S 1/ 6 PDF
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Дата модификации: 28.06.2019

Размер: 784.5 Кб

6 стр.

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