IRLML5203

Hottech
IRLML5203 P-Channel Power MOSFET FEATURES Generation V Technology Ultra Low On-Resistance Low Profile (<1.1mm) Fast Switching     SOT-23 MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Weight: 0.008 grams (approximate) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) VDS ID @ TA = 25°C ID @ TA= 70°C IDM Param...
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  • Группа: FET транзисторы  
  • Истор. имя: IRLML5203 (INFIN)
  • Корпус: TO236
  • Норма упаковки: 3000  шт. (в ленте)

Технические характеристики

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Корпус TO236
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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IRLML5203 P-Channel Power MOSFET FEATURES Generation V Technology Ultra Low On-Resistance Low Profile (<1.1mm) Fast Switching     SOT-23 MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Weight: 0.008 grams (approximate) Absolute Maximum Ratings (TA = 25°C unless otherwise noted) VDS ID @ TA = 25°C ID @ TA= 70°C IDM Parameter TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range RJA Maximum Junction-to-Ambient ƒ PD @TA = 25°C PD @TA = 70°C VGS Max. Units -30 -3.0 -2.4 -24 1.25 0.80 10 ± 20 -55 to + 150 V mW/°C V °C 100 °C/W A W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS /TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 ––– ––– ––– -1.0 3.1 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.019 ––– ––– ––– ––– ––– ––– ––– ––– 9.5 2.3 1.6 12 18 88 52 510 71 43 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 98 VGS = -10V, ID = -3.0A ‚ m 165 VGS = -4.5V, ID = -2.6A ‚ -2.5 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0V µA -5.0 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 14 ID = -3.0A 3.5 nC VDS = -24V VGS = -10V ‚ 2.4 ––– VDD = -15V ‚ ––– ID = -1.0A ns ––– RG = 6.0 ––– VGS = -10V ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Continuous Source Current ––– ––– -1.3 (Body Diode) A Pulsed Source Current ISM ––– ––– -24 (Body Diode)  VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 17 26 ns Qrr Reverse Recovery Charge ––– 12 18 nC Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width  400µs; duty cycle  2%. ƒ Surface mounted on FR-4 board, t  5sec. IS ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. S TJ = 25°C, IS = -1.3A, VGS = 0V ‚ TJ = 25°C, IF = -1.3A di/dt = -100A/µs ‚ E-mail:hkt@heketai.com 1/6 PDF
Документация на IRLML5203 

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Дата модификации: 29.06.2019

Размер: 729.8 Кб

6 стр.

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