IRLML6302

Hottech
IRLML6302 P-Channel Power MOSFET FEATURES  Generation V Technology  Ultra Low On-Resistance  Low Profile (<1.1mm)  Fast Switching MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Weight: 0.008 grams (approximate)  Marking:1C7K SOT-23 Absolute Maximum Ratings(TA = 25°C unless otherwise noted) ID @ TA = 25°C ID @ TA = 70°C ...
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  • Группа: FET транзисторы  
  • Истор. имя: IRLML6302 (INFIN)
  • Корпус: —
  • Норма упаковки: 3000  шт. (в ленте)

Технические характеристики

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Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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IRLML6302 P-Channel Power MOSFET FEATURES  Generation V Technology  Ultra Low On-Resistance  Low Profile (<1.1mm)  Fast Switching MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Weight: 0.008 grams (approximate)  Marking:1C7K SOT-23 Absolute Maximum Ratings(TA = 25°C unless otherwise noted) ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG RJA Parameter Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Maximum Junction-to-Ambient „ Max. Units -0.78 -0.62 -3.0 540 4.3 ± 12 -5.0 -55 to + 150 230 A mW mW/˚C V V/ns °C °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.40 0.56 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -4.9 ––– ––– ––– ––– ––– ––– ––– ––– 2.4 0.56 1.0 13 18 22 22 97 53 28 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– mV/°C Reference to 25°C, ID = -1mA 85 VGS = -4.5V, ID = - 3A ƒ m 120 VGS = -2.5V, ID = - 2A ƒ -1.0 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -0.31A -1.0 VDS = -20V, VGS = 0V µA -25 VDS = -20V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V 3.6 ID = -0.61A 0.84 nC VDS = -16V 1.5 VGS = -4.5V, See Fig. 6 and 9 ƒ ––– VDD = -10V ID = -0.61A ––– ns RG = 6.2 ––– ––– RD = 16 See Fig. 10 ƒ ––– VGS = 0V pF VDS = -15V ––– ƒ = 1.0MHz, See Fig. 5 ––– Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– -0.54 ––– ––– -3.0 ––– ––– ––– ––– 35 26 -1.2 53 39 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -0.61A, VGS = 0V ƒ TJ = 25°C, IF = -0.61A di/dt = 100A/µs ƒ D G S Notes:  Repetitive rating ; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ ISD  -0.61A, di/dt  76A/µs, VDD  V(BR)DSS, TJ  150°C ƒ Pulse width  3 00µs ; duty cycle  2%. „ Surface mounted on FR-4 board, t  5sec. ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1/6 PDF
Документация на IRLML6302 

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Дата модификации: 29.06.2019

Размер: 911.4 Кб

6 стр.

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