CJU02N60M1

JSCJ
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N60M1 V(BR)DSS N-Channel Power MOSFET RDS(on)MAX ID 2.7Ω@10V 2A 600V TO-252-2L 1. GATE 2. DRAIN 3. SOURCE 2 1 ~ General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In additio...
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Внешний вид CJU02N60M1
  • Корпус: TO2522L

Аналоги 3

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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMO07N60C4 (WAYON)
 
TO252 в ленте 2500 шт
 
P= CS2N60A4H (CRMICRO)
 
TO252
P= CS2N60A4R (CRMICRO)
 
TO252
 

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N60M1 V(BR)DSS N-Channel Power MOSFET RDS(on)MAX ID 2.7Ω@10V 2A 600V TO-252-2L 1. GATE 2. DRAIN 3. SOURCE 2 1 ~ General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. 3 FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized for Use in Bridge Circuits z IDSS and VDS(on) Specified at Elevated Temperature MARKING EQUIVALENT CIRCUIT m U02N60M1= Device code Solid dot = Green molding compound device, if none, the normal device XXXX=Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID ① 2 Pulsed Drain Current IDM② 8 Single Pulsed Avalanche Energy EAS ③ ① PD Power Dissipation ⑥ RθJA Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case RθJC TJ, TSTG Operating Junction and Storage Temperature Range www.jscj-elec.com ① 1 Unit V A 88 mJ 62.5 W 75 ℃/W 2 ℃/W -55 ~+150 ℃ Rev. - 1.0 PDF
Документация на CJU02N60M1 

Author: Administrator

Дата модификации: 08.06.2023

Размер: 5.71 Мб

6 стр.

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