LMBT2222ATT1G

LRC
LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Ap...
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Технические характеристики

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Корпус —
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Коэффициент усиления по току
Примечание Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, NPN
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LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site SC-89 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device COLLECTOR 3 † Shipping Maring LMBT2222ATT1G S-LMBT2222ATT1G 1P 1P 3000 / Tape & Reel LMBT2222ATT3G S-LMBT2222ATT3G 1P 1P 10000 / Tape & Reel 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous MARKING DIAGRAM 1P M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Operating and Storage Junction Temperature Range 1 1P M G = Specific Device Code = Date Code = Pb−Free Package ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL − 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX − 100 nAdc Characteristic OFF CHARACTERISTICS Rev.O 1/3 PDF
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Дата модификации: 22.08.2012

Размер: 117.9 Кб

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