NCEP40T35ALL

NCE
NCEP40T35ALL http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP40T35ALL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and...
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Технические характеристики

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Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала (мин)
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора ±
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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NCEP40T35ALL http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP40T35ALL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =570A (Silicon Limited) RDS(ON)=0.63mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested ● 100% ΔVds tested TOLL-8L Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP40T35ALL NCEP40T35ALL TOLL-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID 570 A ID (100℃) 350 A Drain Current-Continuous (Package Limited) ID 400 A Pulsed Drain Current IDM 1600 A Maximum Power Dissipation PD 500 W 3.33 W/℃ EAS 1800 mJ TJ,TSTG -55 To 175 ℃ RθJC 0.3 ℃/W Drain Current-Continuous (Silicon Limited)(Note1) Derating factor Single pulse avalanche energy (Note2) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case Wuxi NCE Power Co., Ltd Page 1 V5.0 PDF
Документация на NCEP40T35ALL 

NCE N-Channel Enhancement Mode Power MOSFET Keywords:

Дата модификации: 21.03.2023

Размер: 655.4 Кб

6 стр.

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