NSI1200-DDBR

Novosense
NSi1200 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.2 Product Overview NSI1200 is a high-performance isolated amplifier with output separated from input based on the NOVOSENSE capacitive isolation technology. The device has a linear differential input signal range of ±250mV (±320mV fullscale). The differential input is ideally suited to shunt resistor-based current sensing...
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Внешний вид NSI1200-DDBR

Технические характеристики

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Корпус SOP-8
Напряжение изоляции RMS
Кол-во передатчиков
Кол-во приемников
Максимальная задержка сигнала
Диапазон напряжений питания
Примечание
Рабочая температура
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Аналоги 2

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Тип Наименование Корпус Упаковка i Изоляция TX RX Скорость Задержка U пит Примечание T раб Карточка
товара
P= CA-IS1200U (CHIPANLG)
 
— в ленте 114 шт
 
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P= NSI1200-DSWVR (NOVOSENS)
 
SO-8 SOIC8 1 шт
 
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Файлы 1

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NSi1200 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.2 Product Overview NSI1200 is a high-performance isolated amplifier with output separated from input based on the NOVOSENSE capacitive isolation technology. The device has a linear differential input signal range of ±250mV (±320mV fullscale). The differential input is ideally suited to shunt resistor-based current sensing in high voltage applications where isolation is required. The device has a fixed gain of 8 and provides a differential analog output. The low offset and gain drift ensure the accuracy over the entire temperature range. High common-mode transient immunity ensures that the device is able to provide accurate and reliable measurements even in the presence of high-power switching such as in motor control applications. The fail-safe functions including input common-mode overvoltage detection and missing VDD1 detection simplify system-level design and diagnostics. Key Features  Up to 5000Vrms Insulation voltage  ±250mV linear Input Voltage Range  Fixed Gain: 8  Low Offset Error and Drift: ±0.5mV (Max), -4~4μV/℃ (Max)  Low Gain Error and Drift: ±0.3% (Max), ±50ppm/℃ (Max)  Low Nonlinearity and Drift:  Input common-mode overvoltage detection  Operation Temperature: -40℃ ~125℃  AEC-Q100 qualified for automotive applications  RoHS-Compliant Packages: SOP8(300mil) DUB8 Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A approval IEC60950-1 standard  DIN VDE V 0884-11:2017-01 Applications  Shunt current monitoring  AC motor controls  Power and solar inverters  Uninterruptible Power Suppliers  Automotive onboard chargers Device Information Part Number NSI1200-Q1SWVR Package SOP8(300mil) Body Size 5.85mm × 7.50mm NSI1200-DSWVR SOP8(300mil) 5.85mm × 7.50mm NSI1200-DDBR DUB8 9.27mm × 6.20mm Functional Block Diagrams ±0.03% (Max), ±1ppm/℃ (Typ)  SNR: 86dB (Typ, BW=10kHz), 72dB (Typ, BW=100kHz)  Bandwidth: 100kHz (Typ)  High CMTI: 150kV/μs (Typ)  System-Level Diagnostic Features:  VDD1 monitoring Copyright © 2020, NOVOSENSE Figure 1. NSi1200 Block Diagram Page 1 PDF
Документация на NSI1200-DDBR 

Copyright © 2019, NOVOSENSE Keywords:

Дата модификации: 14.02.2022

Размер: 4.01 Мб

19 стр.

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