NSM2012-10B5R-DSPR

Novosense
NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 3kV High-Isolation Datasheet (EN) 1.0 Product Overview  CMTI > 100V/ns NSM2012 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip.  Creepage distance/Clearance distance: 4mm NOVOSENSE innovative isolation technology and signal condition...
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Внешний вид NSM2012-30B3R-DSPR

Технические характеристики

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Пиковый измеряемый ток
Тип выходного сигнала
Время срабатывания
Напряжение питания
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Рабочая температура
Примечания Chip-level Current Sensor with Integrated Current Path（<100A）
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Аналоги 2

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Тип Наименование Корпус Упаковка i Ток изм. Чувствительность Выход Скорость UCC ICC T раб Примечания Карточка
товара
P= CH70110AB5PR (COSEMI)
 
SO-8 SOIC8 в ленте 10 шт
P= MT9221CT-10BR5 (MAGNTEK)
 
SO-8 SOIC8 10 шт
 
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Файлы 1

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NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 3kV High-Isolation Datasheet (EN) 1.0 Product Overview  CMTI > 100V/ns NSM2012 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip.  Creepage distance/Clearance distance: 4mm NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2012 supports both a ratiometric output and a fixed output mode. The fixed mode enables customers to use ADC differential sampling of VREF and VOUT voltages to reduce external common-mode (such as temperature,etc). Compared with the current sampling method of the Shunt+ isolated op amp, NSM2012 eliminates the need for the primary side power supply and has a simple and convenient layout. At the same time, it has extremely high isolation withstand voltage and Lifetime stability. In high-side current monitoring applications, NSM2012 can reach a working voltage of 600Vpk, and it can withstand 6kV surge voltage without adding any protection devices. Due to NSM2012 internal accurate temperature compensation algorithm and factory accuracy calibration, this current sensor can maintain good accuracy in the full temperature working range, and the customer does not need to do secondary programming or calibration.  CTI（I）  NOVOSENSE innovative ‘Spin Current’ technology makes offset temperature drift very small  Ratiometric output or fixed output  Working temperature: -40°C ~ 125°C  Primary internal resistance: 1.2mΩ  SOIC8 package  UL62368/EN62368 safety certification  ROHS Applications  Solar system  Industrial power supply  Motor control  OBC/DCDC/PTC Heater  Charging pile Device Information Part Number NSM2012 Package SOIC8 Body Size 4.9mm × 3.9mm Functional Block Diagrams Support 3.3V/5V power supply (different version) Key Features  High bandwidth and fast response time  400kHz bandwidth  1.5us response time  High-precision current measurement  Differential Hall sets can immune stray field  High isolation level that meets UL standards  Withstand isolation voltage (VISO): 3000Vrms  Maximum surge isolation withstand voltage (VIOSM): 6kV Copyright © 2021, NOVOSENSE Figure 1. NSM2012 Block Diagram Page 1 PDF
Документация на NSM2012-05B5R-DSPR 

Дата модификации: 01.06.2022

Размер: 1.51 Мб

22 стр.

    Публикации 1

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    14 декабря 2022
    новость

    Датчики и изоляторы сигналов Novosense поступили на склад КОМПЭЛ

    На нашем складе появилась продукция производства компании Novosense: калиброванные MEMS–датчики давления; интегральные датчики температуры и влажности; датчики тока на эффекте Холла со встроенным измерительным проводником; датчики поворота... ...читать

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    CH70105AB5PR (COSEMI)