1N4007G

Диод выпрямительный на напряжение до 1000 В, ток до 1 А, с падением напряжения 1.1 В, производства Shikues (SHIKUES)
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Технические характеристики

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Корпус DO214AC
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Прямое падение напряжения
Обратный ток диода
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Аналоги 40

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Тип Наименование Корпус Упаковка i Сборка Uобр Iпрям Uпрям Особенности Iобр t ов Сперех T раб Монтаж Примечание Карточка
товара
P= M7 SMAG (JSCJ)
 
DO214AC в ленте 5000 шт
 
P= FM407 (LRC)
 
DO-214AC SMA Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC
P= S1M-A (ANBON)
 
DO214AC
P= S1ML (JSCJ)
 
SOD123FL в ленте 3000 шт
 
P= SS36AQ (YJ)
 
DO-214AC SMA
 
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AC
P= GS1MQ (YJ)
 
DO214AC Surface Mount General Purpose Rectifier
P= S1MG (SHIKUES)
 
DO214AC
 
P= US1M (DC)
 

US1M (DIODES)
DO214AC в ленте 7500 шт
P= GS1M (YJ)
 
DO214AC в ленте 5000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC
P= FM404 (LRC)
 
DO-214AC SMA Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC
P= FM401 (LRC)
 
DO-214AC SMA
 
P= FM403 (LRC)
 
DO-214AC SMA
 
P= 1N4004G (SHIKUES)
 
DO214AC
 
P= S1AG (SHIKUES)
 
DO214AC
 
P= RS1M (DC)
 

RS1M (DIODES)
DO214AC в ленте 7500 шт Выпрямительный диод - Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC
P= S3M (DC)
 

S3M (DIODES)
DO214AB в ленте 3000 шт Выпрямительный диод - [DO-214AB]
P= RS1M (YJ)
 

RS1M (DIODES)
DO214AC в ленте 5000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM)
P= GS1J (YJ)
 
DO214AC 5000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC
P= S1DG (SHIKUES)
 
DO214AC
 
P= S1G (DC)
 

S1G (ONS-FAIR)
DO214AC в ленте 3000 шт
P= S1M (DC)
 

S1M (DIODES)
DO214AA в ленте 3000 шт
P= GS1M (DC)
 
DO214AC в ленте 7500 шт Необходимо фото этикеток на заводской таре Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC
P= HS1MB (YJ)
 
DO214AA в ленте 3000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AA
P= S2MB (LRC)
 
DO-214AA SMB
 
P= M7 (DC)
 

M7-DIO (DIOTEC)
DO214AC 7500 шт Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon
P= HFMAF109 (LRC)
 
SMAFL
 
P= SOD4007-SH (LRC)
 
SOD123FL
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon
P= DSR1M (ANBON)
 
SOD123 в ленте 3000 шт
 
P= US1MW (SHIKUES)
 
SOD123FL
 
P= US1M (YJ)
 

US1M (DIODES)
DO214AC в ленте 5000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM)
P= HS1M (YJ)
 
DO214AC в ленте 5000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC
P= HFM108 (LRC)
 
DO-214AC SMA Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC
P= US1MG (SHIKUES)
 
DO214AC
 
P= US1M (YOUTAI)
 

US1M (DIODES)
DO-214AC SMA в ленте 2000 шт
P= US1M-A (ANBON)
 
DO214AC
 
P= US1M SMAG (JSCJ)
 
DO214AC в ленте 5000 шт
 
P= US1K (JSCJ)
 
DO214AC в ленте 5000 шт
 
P= HFM107 (LRC)
 
DO-214AC SMA Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC
P= HS1Q (YJ)
 
DO214AC в ленте 5000 шт
P= HS1MQ (YJ)
 
DO214AC 100 шт Surface Mount High Efficient Rectifier

Файлы 2

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1N4001G THRU 1N4007G Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz 2 Top View Marking Code: M1~M7 Simplified outline SMA and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G Units Parameter Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 15 pF RθJA 75 °C/W T j , T stg -55 ~ +150 °C Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance Typical Thermal Resistance (1) (2) Operating and Storage Temperature Range (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. 1 of 3 PDF
Документация на 1N4007G 

SMA-A-M1~M7-1A1KV-46mil.cdr

Дата модификации: 19.08.2024

Размер: 1.2 Мб

3 стр.

1N4001G THRU 1N4007G Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz 2 Top View Marking Code: M1~M7 Simplified outline SMA and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G Units Parameter Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 15 pF RθJA 75 °C/W T j , T stg -55 ~ +150 °C Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance Typical Thermal Resistance (1) (2) Operating and Storage Temperature Range (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. REV.08 1 of 3 PDF
Документация на 1N4001G 

SMA-A-M1~M7-1A1KV-46mil.cdr

Дата модификации: 01.01.1970

Размер: 1.33 Мб

3 стр.

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