DG75H12T2

StarPower
DG75H12T2 IGBT Discrete DOSEMI IGBT DG75H12T2 1200V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features       Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive...
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  • Корпус: TO247MAX

Аналоги 6

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CGWT80N65F2KAD (JSCJ)
 
TO-247-3 в линейках 30 шт
 
P= NCE80TD60BT (NCE)
 
TO-247-3 22 шт
P= NCE60TD60BT (NCE)
 
TO-247-3 в линейках 12 шт
P= CRG75T60AK3HD (CRMICRO)
 
TO-247-3
 
P= DG75X12T2 (STARPWR)
 
TO-247-3 1 шт
 
P= SGT75T65SDM1P7 (SILAN)
 
TO2473
 

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DG75H12T2 IGBT Discrete DOSEMI IGBT DG75H12T2 1200V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features       Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications Solar Power Electronic welder Uninterruptible power supply Equivalent Circuit Schematic ©2021 STARPOWER Semiconductor Ltd. 12/7/2021 1/6 preliminary PDF
Документация на DG75H12T2 

Дата модификации: 10.12.2021

Размер: 268.1 Кб

6 стр.

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