MBS10RCG

Taiwan Semiconductor
MBS2 thru MBS10 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - UL Recognized File # E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Hal...
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Технические характеристики

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Корпус SOT-223
Конфигурация соединения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средн)
Рабочая температура
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MBS2 thru MBS10 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - UL Recognized File # E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MBS - AEC-Q101 qualified MECHANICAL DATA Case: Molded plastic body Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Polarity as marked on the body Weight: 0.12 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL MBS2 MBS4 MBS6 MBS8 MBS10 Unit Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forward rectified current On glass-epoxy P.C.B. On aluminum substrate IF(AV) 0.5 0.8 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 35 A VF 1.0 V IR 5 100 μA Maximum instantaneous forward voltage (Note 1) IF= 0.4 A Maximum DC reverse current at rated DC blocking voltage TJ=25 °C TJ=125 °C I2t CJ 5.08 (Note 3) Typical thermal resistance (Note 4) (Note 3) RθJL RθJA RθJA 20 70 85 °C/W Operating junction temperature range TJ - 55 to +150 °C TSTG - 55 to +150 °C Rating for fusing (t<8.3ms) Typical junction capacitance per leg (Note 2) Storage temperature range A2s pF 13 Note 1: Pulse Test with PW=300μs,1% Duty Cycle Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C. Note 3: On glass epoxy P.C.B. mounted on 0.05" x 0.05" (1.3mm x 1.3mm) pads Note 4: On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20mm x 20mm) mounted on 0.05" x 0.05" (1.3mm x 1.3mm) solder pads Document Number: DS_D1410054 Version: N14 PDF
Документация на MBS10RCG 

MBS2 SERIES_N14.xls

Дата модификации: 12.02.2015

Размер: 192.8 Кб

4 стр.

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