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DB156SF1

SUNCO
RoHS DB151S THRU DB157S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and ...
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Тип Наименование Корпус Упаковка i Схема Uобр Uпрям Iпрям Примечание T раб Карточка
товара
PA DB156S (YJ)
 
DBS14 в ленте 1500 шт
 
 Bridge Rectifier Diode, 1.5A, 800V V(RRM)

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RoHS DB151S THRU DB157S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data ● Package: DBS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, Halogen free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code DB151S DB152S DB153S DB154S DB155S DB156S DB157S DB151S DB152S DB153S DB154S DB155S DB156S DB157S 50 100 200 400 600 800 1000 VRRM V IO A 1.5 IFSM A 60 Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode I2t A2s 15 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Repetitive peak reverse voltage Average rectified output On glass-epoxi current @60Hz sine wave, substrate R-load, Ta=40℃ Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS DB151S DB152S DB153S DB154S DB155S DB156S DB157S VF V IFM=0.7A 1.00 IRRM μA VRM=VRRM 5 ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER Thermal Resistance SYMBOL Between junction and ambient, On glass-epoxi substrate RθJ-A Between junction and lead RθJ-L UNIT DB151S DB152S DB153S DB154S DB155S DB156S DB157S 68.0 ℃/W 15.0 1/4 S-S011 Rev. 2.4, 22-Feb-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
Документация на DB151SB1 

Microsoft Word - DB151S THRU DB157S

Дата модификации: 22.02.2021

Размер: 210.9 Кб

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    ABS10 (YJ)