YJD217045NCFGH

Yangjie
RoHS YJD217045NCFGH COMPLIANT Silicon Carbide Power MOSFET （N-Channel Enhancement） VDS 1700V ID（25°C） 55A RDS(on) 45mΩ Features ● High speed switching ● Essentially no switching losses ● Reduction of heat sink requirements ● Maximum working temperature at 175 °C ● High blocking voltage ● Fast Intrinsic diode with low recovery current ● High-frequency operation ● Halogen free, RoHS...
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RoHS YJD217045NCFGH COMPLIANT Silicon Carbide Power MOSFET （N-Channel Enhancement） VDS 1700V ID（25°C） 55A RDS(on) 45mΩ Features ● High speed switching ● Essentially no switching losses ● Reduction of heat sink requirements ● Maximum working temperature at 175 °C ● High blocking voltage ● Fast Intrinsic diode with low recovery current ● High-frequency operation ● Halogen free, RoHS compliant Typical Applications Typical applications are in power factor correction(PFC), solar inverter, uninterruptible power supply, motor drives, photovoltaic inverter, electric car and charger. Mechanical Data ● Package: TO247-4L ● Terminals: Tin plated leads ● Polarity: As marked ■Maximum Ratings (TC=25℃ Unless otherwise specified） PARAMTETER SYMBOL UNIT VALUE Device marking code TEST CONDITIONS NOTE D217045NCFGH Drain source voltage @ Tj=25°C VDS,max V 1700 VGS=0 V, ID=100uA Gate source voltage @ Tj=25°C VGS,max V -10/+25 Absolute maximum values (AC f > 1Hz, duty cycle < 1%) Gate source voltage @ Tj=25°C VGS,op V -5/+20 Recommended operational values 55 VGS=20V, Tc=25℃ ID A 38.5 VGS=20V, Tc=110℃ Pulse Drain Current ID,pulse A 280 Limited by tpw Fig.15 Power Dissipation PTOT W 375 Tc=25°C , Tj = 175℃ Fig.13 Tj ,Tstg °C -55 to +175 Soldering temperature TL °C 260 1.6mm (0.063’’) from case for 10s Mounting torque TM Nm 0.6 M3 screw Maximum of mounting process: 3 Continuous drain current @ Tc=25°C Continuous drain current @ Tc=110°C Operating junction and Storage temperature range Note1 Fig.14 1/9 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
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Дата модификации: 06.10.2023

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