Серия выпрямительных диодов 1N4448

JSCJ

Общие характеристики

 Раздел Выпрямительные диоды
Схема включения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Время обратного восстановления диодов

Документация на серию 1N4448

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes 1N4448W FAST SWITCHING DIODE SOD-123 FEATURES     Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion MARKING: T5 The marking bar indicates the cathode T5 T5 Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V 75 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 500 mW RθJA 250 ℃/W TJ,TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Operation Junction and Storage Temperature Range Electrical Ratings @Ta=25℃ Parameter Symbol Min V (BR)R 75 VF1 0.62 Typ Max Unit Conditions V = IR 10μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V Capacitance Between Terminals CT 4 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Reverse Breakdown Voltage Forward Voltage Reverse Current www.jscj-elec.com 1 IF=IR=10mA Irr=0.1XIR,RL=100Ω Rev. - 2.0 PDF
Документация на 1N4448W 

Author: Administrator

Дата модификации: 20.05.2020

Размер: 1.27 Мб

4 стр.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes 1N4448W SOD-123 FAST SWITCHING DIODE FEATURES MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V 75 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Peak Forward Surge Current @t=1.0μs @t =1.0s Power Dissipation Thermal Resistance Junction to Ambient Storage Temperature and Junction Temperature 4.0 IFSM A 1.5 Pd 500 mW RθJA 250 ℃/W -55~+150 ℃ TSTG/Tj Electrical Ratings @Ta=25℃ Parameter Symbol Min V (BR)R 75 VF1 0.62 Typ Max Unit Conditions V IR=10μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V Capacitance Between Terminals CT 4 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Reverse Breakdown Voltage Forward Voltage Reverse Current IF=IR=10mA Irr=0.1XIR,RL=100Ω C,Jul,2012 PDF
Документация на 1N4448W 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO

Дата модификации: 30.07.2012

Размер: 3.33 Мб

2 стр.

    Товары серии 1N4448

    Наименование i Упаковка Корпус Iпрям Iобр T раб
    1N4448W (JSCJ)
     
    		в ленте 3000 шт SOD123
    1N4448WS (JSCJ)
     

    1N4448WS (DIODES)     		в ленте 3000 шт SOD323
    1N4448WT (JSCJ)
     

    1N4448WT (ONS-FAIR)     		100 шт SOD-523