Серия оптических датчиков положения _NONE

Общие характеристики

	Раздел	Датчики положения оптические
	Режим работы
	Способ монтажа
	Коммутируемый ток (макс)

Документация на серию _NONE

Photomicrosensor (Transmissive) EE-SJ5-B ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • 15.4 ■ Absolute Maximum Ratings (Ta = 25°C) 2.1 × 0.5 Aperture holes (see note) 5±0.2 General-purpose model with a 5-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. RoHS Compliant. Item Emitter Optical axis 1 A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Ambient Operating temperature Storage Topr –25°C to 85°C Tstg –30°C to 100°C Soldering temperature Tsol 260°C (see note 3) Detector Four, 0.25 Four, 0.5 2.54±0.2 Cross section AA Note: There is no difference in size between the slot on the emitter and that on the detector. Internal Circuit K C Unless otherwise specified, the tolerances are as shown below. A Terminal No. Dimensions E Name A K C Anode Cathode Collector E Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value 50 mA (see note 1) IF Pulse forward current IFP 7.2±0.2 9.2±0.3 Symbol Forward current ■ Ordering Information Description Model Photomicrosensor (transmissive) EE-SJ5-B ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Photomicrosensor (Transmissive) EE-SJ5-B 173  PDF

Документация EE-SJ5-B 

EE_SJ5_B_1010.fm

Дата модификации: 12.10.2010

Размер: 264.2 Кб

4 стр.

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Товары серии _NONE

Наименование	i	Упаковка	Выход	Расстояние	Ток излучателя	U out
EE-SJ5-B (OMRON)
EE-SJ8-B (OMRON)
EE-SK3W-B (OMRON)
EE-SM3 (OMRON)
EE-SM3B (OMRON)