IRLML0040

Hottech
IRLML0040 LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance:VDS=40V,RDS(ON)=56mΩ@VGS=10 V,ID=3.6A For Low power DC to DC converter application For Load switch application Surface Mount device MECHANICAL DATA         SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C ...
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Технические характеристики

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Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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Аналоги 7

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Rси (вкл) Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
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Файлы 2

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IRLML0040 LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance:VDS=40V,RDS(ON)=56mΩ@VGS=10 V,ID=3.6A For Low power DC to DC converter application For Load switch application Surface Mount device MECHANICAL DATA         SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol VDS Parameter Max. Units 40 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 IDM Pulsed Drain Current 15 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 16 W/°C V -55 to + 150 °C TJ, TSTG Junction and Storage Temperature Range RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) e A W 100 °C/W 99 Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes:  Repetitive rating; pulse width limited by max. ‚ Pulse width ≤ 400μs; duty cycle ≤ 2%. ƒ Surface mounted on 1 in square Cu board ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD Min. Typ. Max. Units 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 6.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.04 44 62 1.8 ––– ––– ––– ––– 1.1 ––– 2.6 0.7 1.4 5.1 5.4 6.4 4.3 266 49 29 ––– ––– 56 78 2.5 20 250 100 -100 ––– ––– 3.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 1.3 ––– ––– 15 ––– ––– ––– junction ––– 1.2 10 ––– 9.3 ––– temperature. Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.6A mΩ V = 4.5V, I = 2.9A GS D V VDS = VGS, ID = 25μA VDS = 40V, VGS = 0V μA V = 40V, V = 0V, T = 125°C DS GS J VGS = 16V nA VGS = -16V Ω VDS = 10V, ID = 3.6A S ID = 3.6A nC VDS = 20V VGS = 4.5V VDD = 20V ns ID = 1.0A RG = 6.8 Ω VGS = 4.5V VGS = 0V pF VDS = 25V ƒ = 1.0MHz d d d A V ns nC MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C, IS = 1.3A, VGS = 0V TJ = 25°C, VR = 32V, IF = 1.3 A di/dt = 100A/μs E-mail:hkt@heketai.com d d 1/ 6 PDF
Документация на IRLML0040 

Subject:

Дата модификации: 12.11.2020

Размер: 494.6 Кб

6 стр.

IRLML0040 LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance:VDS=40V,RDS(ON)=56mΩ@VGS=10 V,ID=3.6A For Low power DC to DC converter application For Load switch application Surface Mount device MECHANICAL DATA         SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol VDS Parameter Max. Units 40 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 IDM Pulsed Drain Current 15 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 16 W/°C V -55 to + 150 °C TJ, TSTG Junction and Storage Temperature Range RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) e A W 100 °C/W 99 Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes:  Repetitive rating; pulse width limited by max. ‚ Pulse width ≤ 400μs; duty cycle ≤ 2%. ƒ Surface mounted on 1 in square Cu board © SHENZHEN HOTTECH ELECTRONICS CO.,LTD Min. Typ. Max. Units 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 6.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.04 44 62 1.8 ––– ––– ––– ––– 1.1 ––– 2.6 0.7 1.4 5.1 5.4 6.4 4.3 266 49 29 ––– ––– 56 78 2.5 20 250 100 -100 ––– ––– 3.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 1.3 ––– ––– 15 ––– ––– ––– junction ––– 1.2 10 ––– 9.3 ––– temperature. Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.6A mΩ V = 4.5V, I = 2.9A GS D V VDS = VGS, ID = 25μA VDS = 40V, VGS = 0V μA V = 40V, V = 0V, T = 125°C DS GS J VGS = 16V nA VGS = -16V Ω VDS = 10V, ID = 3.6A S ID = 3.6A nC VDS = 20V VGS = 4.5V VDD = 20V ns ID = 1.0A RG = 6.8 Ω VGS = 4.5V VGS = 0V pF VDS = 25V ƒ = 1.0MHz d d d A V ns nC MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C, IS = 1.3A, VGS = 0V TJ = 25°C, VR = 32V, IF = 1.3 A di/dt = 100A/μs E-mail:hkt@heketai.com d d 1/ 6 PDF
Документация на IRLML0040 

Subject:

Дата модификации: 12.11.2020

Размер: 1.1 Мб

6 стр.

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