IRFR320TRPBF-VB

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IRFR320TRPBF-VB www.VBsemi.com IRFR320TRPBF-VB Datasheet Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 2.1 VGS = 10 V Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Single • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalan...
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Внешний вид MJD32CQ
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  • Норма упаковки: 2500  шт. (в ленте)

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P= CJU04N65 (JSCJ)
 
TO2522L
 

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IRFR320TRPBF-VB www.VBsemi.com IRFR320TRPBF-VB Datasheet Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 2.1 VGS = 10 V Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Single • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC D TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente TC = 25 °C VGS at 10 V Continuous Drain Current TC = 100 °C Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya TC = 25 °C Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s Mounting Torque 6-32 or M3 screw SYMBOL LIMIT UNIT VDS VGS 650 ± 30 V ID 4.5 4.2 IDM EAS IAR EAR PD dV/dt TJ, Tstg 18 0.48 325 4 6 60 2.8 - 55 to + 150 300 10 1.1 A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12). c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Drain current limited by maximum junction temperature. 1 PDF
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Дата модификации: 14.03.2024

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