WMJ10N80D1

WAYON
WML10N80D1 WMJ10N80D1 800V 10A 0.91Ω N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. TO-247 TAB G D G D S Features  Typ.RDS(on)=0.91Ω@VGS=10V  100% avalanche tested ...
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WML10N80D1 WMJ10N80D1 800V 10A 0.91Ω N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. TO-247 TAB G D G D S Features  Typ.RDS(on)=0.91Ω@VGS=10V  100% avalanche tested  Pb-free，Halogen free RoHS Applications  SMPS  Charger  DC-DC S compliant Absolute Maximum Ratings（TC=25℃） Parameter Symbol WML10N80D1 WMJ10N80D1 Unit Drain-source voltage VDSS 800 V Gate-source voltage VGS ±30 V Continuous drain current ID 10 A Pulsed drain current IDM 40 A Avalanche energy, single pulse EAS 930 mJ Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 62.5 215 W 0.5 1.72 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 10 A ISpulse 40 A Thermal Characteristic Thermal resistance,junction-to-case RθJC 2 0.58 ℃/W Thermal resistance,junction-to-ambient RθJA 62.5 62.5 ℃/W Rev.1.2 2022 www.way-on.com PDF
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Дата модификации: 06.04.2023

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