WMO95P06TS

WAYON
WMO95P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features  G TO-252 VDS = -60V, ID = -93A RDS(on) < 11mΩ @ VGS = -10V S RDS(on) < 14.5mΩ @ VGS = -4.5V  Green Device Available  Low Gate Charge...
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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMM80P06TS (WAYON)
 
TO263 в ленте 800 шт
 
P- IRF4905S (EVVO)
 

IRF4905S (INFIN) 		TO263 в ленте 800 шт
 
P- NCE60P82AD (NCE)
 
TO263 в ленте 800 шт
 
F~ CJU65P06 (JSCJ)
 
TO2522L 10 шт
 

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WMO95P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features  G TO-252 VDS = -60V, ID = -93A RDS(on) < 11mΩ @ VGS = -10V S RDS(on) < 14.5mΩ @ VGS = -4.5V  Green Device Available  Low Gate Charge  100% EAS Guaranteed D RoHS compliant Applications  DC/DC Converter  Load Switch  Motor Control G S Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TC= 25°C -93 ID Continuous Drain Current TC= 100°C A -58 IDM -372 A EAS 288.8 mJ PD 156.2 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 63 °C/W Thermal Resistance from Junction-to-Case RθJC 0.8 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC= 25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc: W0803920 1/7 PDF
Документация на WMO95P06TS 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 31.07.2023

Размер: 604.5 Кб

7 стр.

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