YJD2120240NCTGH

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RoHS YJD2120240NCTGH COMPLIANT Silicon Carbide Power MOSFET （N-Channel Enhancement） VDS 1200V ID（25°C） 13.5A RDS(on) 240mΩ Features ● High speed switching ● Essentially no switching losses ● Reduction of heat sink requirements ● Maximum working temperature at 175 °C ● High blocking voltage ● Fast Intrinsic diode with low recovery current ● High-frequency operation ● Halogen free, ...
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Технические характеристики

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Корпус TO-247-3
Особенности
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Аналоги 1

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Rси (вкл) Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
P= AS1M160120P (ANBON)
 
TO2473 в линейках 30 шт
 
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Файлы 1

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RoHS YJD2120240NCTGH COMPLIANT Silicon Carbide Power MOSFET （N-Channel Enhancement） VDS 1200V ID（25°C） 13.5A RDS(on) 240mΩ Features ● High speed switching ● Essentially no switching losses ● Reduction of heat sink requirements ● Maximum working temperature at 175 °C ● High blocking voltage ● Fast Intrinsic diode with low recovery current ● High-frequency operation ● Halogen free, RoHS compliant Typical Applications Typical applications are in power factor correction(PFC), solar inverter, uninterruptible power supply, motor drives, photovoltaic inverter, electric car and charger. Mechanical Data ● Package: TO-247AB ● Terminals: Tin plated leads ● Polarity: As marked ■Maximum Ratings (TC=25℃ Unless otherwise specified） PARAMTETER SYMBOL UNIT VALUE Device marking code TEST CONDITIONS NOTE D2120240NCTGH Drain source voltage @ Tj=25°C VDS,max V 1200 VGS=0 V, ID=100uA Gate source voltage @ Tj=25°C VGS,max V -10/+25 Absolute maximum values (AC f > 1Hz, duty cycle < 1%) Gate source voltage @ Tj=25°C VGS,op V -5/+20 Recommended operational values 13.5 VGS=20V, Tc=25℃ ID A 9.5 VGS=20V, Tc=110℃ ID, pulse A 23 Limited by tpw Avalanche energy, Single Pulse EAS mJ 312 VDD=100V, ID=5A Power Dissipation PTOT W 105 Tc=25°C , Tj = 175℃ Tj ,Tstg °C -55 to +175 Soldering temperature TL °C 260 1.6mm (0.063’’) from case for 10s Mounting torque TM Nm 0.6 M3 screw Maximum of mounting process: 3 Continuous drain current @ Tc=25°C Continuous drain current @ Tc=110°C Pulse Drain Current Operating junction and Storage temperature range Note1 Fig.14 Fig.15 Fig.13 1/9 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
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Дата модификации: 06.10.2023

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