IRLML2402

Hottech
IRLML2402 N-CHANNEL POWER MOSFET FEATURES  Ultra low on-resistance:VDS=20V,RDS(ON)=0.25Ω@VGS=4.5V,ID=1.2A  Surface Mount device MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Weight: 0.008 grams (approximate) D 3 1 G Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 7...
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  • Группа: FET транзисторы  
  • Истор. имя: IRLML2402 (INFIN)
  • Корпус: —
  • Норма упаковки: 3000  шт. (в ленте)

Технические характеристики

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Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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Аналоги 10

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Rси (вкл) Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
P= IRLML2402 SOT-23 (HOTTECH)
 
— в ленте 3000 шт
 
 — — — — — — — — — — — —
P= WM02N28M (WAYON)
 
SOT-23-3 в ленте 3000 шт
 
 — — — — — —
A+ WM02N20G (WAYON)
 
SOT-323-3 в ленте 3000 шт — — — — — —
A+ CJ2302 (JSCJ)
 
SOT-23-3 в ленте 3000 шт
 
 — —
A+ IRLML2402 (YOUTAI)
 

IRLML2402 (INFIN) 		SOT-23-3 в ленте 3000 шт
 
 — —
A+ CJ2302S (JSCJ)
 
SOT-23-3
 
 — —
A+ CJ2102A (JSCJ)
 
SOT-323-3 —
A+ CJ2102 (JSCJ)
 
SOT-323-3 —
A+ IRLML2402TR (YOUTAI)
 

IRLML2402TR (INFIN) 		SOT-23-3 в ленте 3000 шт
 
 — —
A+ FDN335N (YOUTAI)
 

FDN335N (ONS-FAIR) 		SOT-23-3 в ленте 3000 шт
 
 — —

Файлы 2

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IRLML2402 N-CHANNEL POWER MOSFET FEATURES  Ultra low on-resistance:VDS=20V,RDS(ON)=0.25Ω@VGS=4.5V,ID=1.2A  Surface Mount device MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Weight: 0.008 grams (approximate) D 3 1 G Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 2 S Max. Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Units 1.2 0.95 7.4 540 4.3 ± 12 5.0 -55 to + 150 A mW mW/°C V V/ns °C Thermal Resistance Parameter RθJA Typ. Maximum Junction-to-Ambient „ ––– Max. Units 230 °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 20 ––– ––– V VGS = 0V, ID = 250µA ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.25 VGS = 4.5V, ID = 0.93A ƒ Ω ––– ––– 0.35 VGS = 2.7V, ID = 0.47A ƒ 0.70 ––– ––– V VDS = VGS, ID = 250µA 1.3 ––– ––– S VDS = 10V, ID = 0.47A ––– ––– 1.0 VDS = 16V, VGS = 0V µA ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C ––– ––– -100 VGS = -12V nA ––– ––– 100 VGS = 12V ––– 2.6 3.9 ID = 0.93A ––– 0.41 0.62 nC VDS = 16V ––– 1.1 1.7 VGS = 4.5V, See Fig. 6 and 9 ƒ ––– 2.5 ––– VDD = 10V ––– 9.5 ––– ID = 0.93A ns ––– 9.7 ––– RG = 6.2Ω ––– 4.8 ––– RD = 11Ω, See Fig. 10 ƒ ––– 110 ––– VGS = 0V ––– 51 ––– pF VDS = 15V ––– 25 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 0.54 ––– ––– 7.4 ––– ––– ––– ––– 25 16 1.2 38 24 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 0.93A, VGS = 0V ƒ TJ = 25°C, IF = 0.93A di/dt = 100A/µs ƒ D G S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Surface mounted on FR-4 board, t ≤ 5sec. ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1/6 PDF
Документация на IRLML2402 

Subject:

Дата модификации: 12.11.2020

Размер: 511 Кб

6 стр.

IRLML2402 N-CHANNEL POWER MOSFET FEATURES  Ultra low on-resistance:VDS=20V,RDS(ON)=0.25Ω@VGS=4.5V,ID=1.2A  Surface Mount device MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Weight: 0.008 grams (approximate) D 3 1 G Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 2 S Max. Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Units 1.2 0.95 7.4 540 4.3 ± 12 5.0 -55 to + 150 A mW mW/°C V V/ns °C Thermal Resistance Parameter RθJA Typ. Maximum Junction-to-Ambient „ ––– Max. Units 230 °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 20 ––– ––– V VGS = 0V, ID = 250µA ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.25 VGS = 4.5V, ID = 0.93A ƒ Ω ––– ––– 0.35 VGS = 2.7V, ID = 0.47A ƒ 0.70 ––– ––– V VDS = VGS, ID = 250µA 1.3 ––– ––– S VDS = 10V, ID = 0.47A ––– ––– 1.0 VDS = 16V, VGS = 0V µA ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C ––– ––– -100 VGS = -12V nA ––– ––– 100 VGS = 12V ––– 2.6 3.9 ID = 0.93A ––– 0.41 0.62 nC VDS = 16V ––– 1.1 1.7 VGS = 4.5V, See Fig. 6 and 9 ƒ ––– 2.5 ––– VDD = 10V ––– 9.5 ––– ID = 0.93A ns ––– 9.7 ––– RG = 6.2Ω ––– 4.8 ––– RD = 11Ω, See Fig. 10 ƒ ––– 110 ––– VGS = 0V ––– 51 ––– pF VDS = 15V ––– 25 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 0.54 ––– ––– 7.4 ––– ––– ––– ––– 25 16 1.2 38 24 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 0.93A, VGS = 0V ƒ TJ = 25°C, IF = 0.93A di/dt = 100A/µs ƒ D G S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Surface mounted on FR-4 board, t ≤ 5sec. © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/6 PDF
Документация на IRLML2402 

Subject:

Дата модификации: 12.11.2020

Размер: 1011 Кб

6 стр.

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