WMM115N15HG4

WAYON
WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4 th generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. G This device is well suited for high efficiency fast switching applications. S TO-263 Features  VDS = 150V, ID = 88A RDS(on...
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  • Корпус: TO263
  • Норма упаковки: 800  шт.

Аналоги 2

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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMO080N10HG2 (WAYON)
 
TO252 в ленте 800 шт
 
P= WMM115N15HG2 (WAYON)
 
TO263 в ленте 800 шт
 

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WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4 th generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. G This device is well suited for high efficiency fast switching applications. S TO-263 Features  VDS = 150V, ID = 88A RDS(on) < 11.5mΩ @ VGS = 10V  Low RDS(ON)  100% EAS Guaranteed  High Speed Power Switching compliant G Applications  Synchronous Rectification  DC/DC Converter  Motor Control D RoHS S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TC=25°C ID Continuous Drain Current TC=100°C 88 A 56 IDM 352 A EAS 204.8 mJ PD 178.6 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 58 °C/W Thermal Resistance from Junction-to-Case RθJC 0.7 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803839 1/7 PDF
Документация на WMM115N15HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 21.03.2023

Размер: 709.3 Кб

7 стр.

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