WMK115N15HG4

WAYON
WMK115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMK115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GD Features  S TO-220 VDS = 150V, ID = 88A RDS(on) <...
развернуть ▼ свернуть ▲
 
  • Корпус: —
  • Норма упаковки: 50  шт. (в линейках)

Аналоги 5

показать свернуть
Тип Наименование Корпус Упаковка i Карточка
товара
P= WMK099N10HGS (WAYON)
 
TO-220-3 в линейках 1000 шт
 
P= WMK115N15HG2 (WAYON)
 
TO-220-3 в линейках 1000 шт
 
P- NCEP080N10 (NCE)
 
TO-220-3 13 шт
 
P- NCEP1580 (NCE)
 
TO-220-3 в линейках 1000 шт
 
P- YJP70G10B (YJ)
 
TO-220-3 в линейках 1000 шт
 

Файлы 1

показать свернуть
WMK115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMK115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GD Features  S TO-220 VDS = 150V, ID = 88A RDS(on) < 11.5mΩ @ VGS = 10V  Low RDS(ON)  100% EAS Guaranteed  High Speed Power Switching compliant G Applications  Synchronous Rectification  DC/DC Converter  Motor Control D RoHS S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TC=25°C ID Continuous Drain Current TC=100°C 88 A 56 IDM 352 A EAS 204.8 mJ PD 178.6 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 52 °C/W Thermal Resistance from Junction-to-Case RθJC 0.7 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2022 Doc:W0803780 1/7 PDF
Документация на WMK115N15HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 14.12.2023

Размер: 622.8 Кб

7 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.