WMK020N06HG4

WAYON
WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GD Features  S TO-220 VDS = 60V, ID = 258A RDS(on) < ...
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Тип Наименование Корпус Упаковка i Карточка
товара
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WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GD Features  S TO-220 VDS = 60V, ID = 258A RDS(on) < 2.1mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge  High Speed Switching RoHS D compliant G Applications S  Power Management Switches  DC/DC Converter  LED Backlighting Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current TC=100°C ID 258 A 163 IDM 1032 A EAS 583.2 mJ PD 227 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 58 °C/W Thermal Resistance from Junction-to-Case RθJC 0.55 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803898 1/7 PDF
Документация на WMK020N06HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 03.07.2023

Размер: 596.2 Кб

7 стр.

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