Вход / Регистрация

WML030N06HG4

WAYON
WML030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WML030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GD S is well suited for high efficiency fast switching applications. TO-220F Features  VDS = 60V, ID = 170A RDS(on) <...
развернуть ▼ свернуть ▲
 
  • Корпус: TO220F

Файлы 1

показать свернуть
WML030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WML030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GD S is well suited for high efficiency fast switching applications. TO-220F Features  VDS = 60V, ID = 170A RDS(on) < 3.4mΩ @ VGS = 10V  Low RDS(on)  Low Gate Charge  100% EAS Guaranteed  RoHS and Halogen-Free Compliant RoHS D compliant G Applications S  Power Management in Switches  DC/DC Converter Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 170 108 A IDM 680 A EAS 352.8 mJ PD 166 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 58 °C/W Thermal Resistance from Junction-to-Case RθJC 0.75 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803840 1/7 PDF
Документация на WML030N06HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 24.03.2023

Размер: 632 Кб

7 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.