WMJ023N08HGS

WAYON
WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G Features ⚫ D S TO-247 VDS= 80V, ID = 280A RDS(on) < 2.4mΩ...
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  • Корпус: TO-247-3
  • Норма упаковки: 30  шт. (в линейках)

Аналоги 3

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CRSP027N10NZ (CRMICRO)
 
TO-247-3 2000 шт
P= CRSQ027N10N (CRMICRO)
 
TO-247-3 в линейках 25 шт
 
P- NCE85H25T (NCE)
 
TO-247-3 в линейках 600 шт
 

Файлы 1

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WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G Features ⚫ D S TO-247 VDS= 80V, ID = 280A RDS(on) < 2.4mΩ @ VGS = 10V ⚫ High Speed Power Switching ⚫ Low Gate Charge RoHS ⚫ Low RDS(ON) compliant ⚫ 100% EAS Guaranteed D G Applications ⚫ DC/DC Converter ⚫ Power Management Switching ⚫ Motor Driver S Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V TC=25°C 280 Continuous Drain Current ID TC=100°C Pulsed Drain Current1 A 177 IDM 1120 A EAS 625 mJ PD 320.5 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 42 °C/W Thermal Resistance from Junction-to-Case RθJC 0.39 °C/W Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2022 Doc:W0803766 1 / 7 PDF
Документация на WMJ023N08HGS 

Shang Hai Wayon Thermo-Electro

Дата модификации: 21.11.2022

Размер: 452.2 Кб

7 стр.

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