WMK100N10TS

WAYON
WMK100N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMK100N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features  GD S TO-220 VDS= 100V, ID = 100A RDS(on) < 12mΩ @ VGS = 10V  Extremely Low Switching Loss  Excellent Stability and Uniformity  Low ...
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P- JMTC170N10A (JIEJIE)
 
TO2203L в линейках 50 шт
 

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WMK100N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMK100N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features  GD S TO-220 VDS= 100V, ID = 100A RDS(on) < 12mΩ @ VGS = 10V  Extremely Low Switching Loss  Excellent Stability and Uniformity  Low Gate Charge  100% EAS Guaranteed RoHS D compliant Applications G  Power Management Switches  DC/DC Converters  LED Backlighting S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID TC=100°C 100 A 63 IDM 400 A EAS 245 mJ PD 258.6 W TJ, TSTG -55 to 175 °C Symbol Value Unit Thermal Resistance from Junction-to- Ambient3 RθJA 63 °C/W Thermal Resistance from Junction-to-Case RθJC 0.58 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.1, 2023 Doc:W0803794 1/7 PDF
Документация на WMK100N10TS 

Shang Hai Wayon Thermo-Electro

Дата модификации: 12.06.2023

Размер: 599.5 Кб

7 стр.

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