WMO048NV6LG4

WAYON
WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G TO-252 Features  S VDS = 65V, ID = 90A RDS(on) <...
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  • Корпус: —
  • Норма упаковки: 1  шт. (в ленте)

Аналоги 4

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Тип Наименование Корпус Упаковка i Карточка
товара
P= NCE6080K (NCE)
 
TO252 в ленте 2500 шт
 
P= YJD80G06C (YJ)
 
TO252 2500 шт
P= WMO076N06LG2 (WAYON)
 
TO252 в ленте 2500 шт
 
P= WMO060N06LG2 (WAYON)
 
TO252 в ленте 2500 шт
 

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WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G TO-252 Features  S VDS = 65V, ID = 90A RDS(on) < 5mΩ @ VGS = 10V RDS(on) < 6.5mΩ @ VGS = 4.5V  Low RDS(ON)  100% EAS Guaranteed  High Speed Power Switching RoHS D compliant Applications G  Synchronous Rectification  DC/DC Converter S Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID TC=100°C 90 A 57 IDM 360 A EAS 135.2 mJ PD 71.4 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 58 °C/W Thermal Resistance from Junction-to-Case RθJC 1.75 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.1, 2023 Doc:W0803854 1/7 PDF
Документация на WMO048NV6LG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 25.05.2023

Размер: 658.7 Кб

7 стр.

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