WMK175N10HG4

WAYON
WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GD Features  S TO-220 VDS = 100V, ID = 46A RDS(on) <...
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  • Корпус: —
  • Норма упаковки: 50  шт. (в линейках)

Аналоги 11

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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMK175N10LG4 (WAYON)
 
—
 
P= YJP70G10A (YJ)
 
TO-220-3 1000 шт
 
P= NCE0157 (NCE)
 
TO-220-3
 
P= WMK175N10LG2 (WAYON)
 
TO-220-3 в линейках 1000 шт
 
P= WMK175N10HG2 (WAYON)
 
TO-220-3 в линейках 1000 шт
 
P= NCE0130A (NCE)
 
TO-220-3
 
P= WMK25N10T1 (WAYON)
 
TO-220-3 в линейках 1000 шт
 
P- YJP45G10B (YJ)
 
TO-220-3 в линейках 1000 шт
 
P- NCE0157A2 (NCE)
 
TO-220-3 в линейках 1000 шт
 
P- CS540A8 (CRMICRO)
 
TO220AB
 
P- JMTC320N10A (JIEJIE)
 
TO2203L в линейках 50 шт
 

Файлы 1

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WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GD Features  S TO-220 VDS = 100V, ID = 46A RDS(on) < 17mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge  High Speed Switching RoHS D compliant G Applications S  Power Management Switches  DC/DC Converter  LED Backlighting Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 46 29 A IDM 184 A EAS 80 mJ PD 73 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 58 °C/W Thermal Resistance from Junction-to-Lead RθJC 1.71 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803856 1/7 PDF
Документация на WMK175N10HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 10.04.2023

Размер: 599.2 Кб

7 стр.

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