WMO175N10HG4

WAYON
WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G TO-252 Features  S VDS = 100V, ID = 45A RDS(on) &...
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WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G TO-252 Features  S VDS = 100V, ID = 45A RDS(on) < 17.5mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge  High Speed Switching RoHS D compliant G Applications S  Power Management Switches  DC/DC Converter  LED Backlighting Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current ID TC=100°C 45 A 28.5 IDM 180 A EAS 80 mJ PD 67.5 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 45 °C/W Thermal Resistance from Junction-to-Lead RθJC 1.85 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2022 Doc:W0803790 1/7 PDF
Документация на WMO175N10HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 03.01.2023

Размер: 609.8 Кб

7 стр.

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